Samsung Electronics has started producing the 8 Gb DDR4 memory and 32 GB module — on a new 20-nanometer (nm) process technology — targeting enterprise servers.
“By expanding the production of our 20nm DRAM line-ups, we will provide high-density DRAM products, while handling increasing demand from customers in the global premium enterprise market,” said Jeeho Baek, vice president of Memory Marketing at Samsung Electronics.
With its new 8Gb DDR4, Samsung now offers a full line-up of 20nm-based DRAM to lead a new era of 20nm DRAM efficiency that also includes the 20nm 4Gb DDR3 for PCs and the 20nm 6Gb LPDDR3 for mobile devices.
Earlier this month, Samsung said it started producing 32GB registered dual in-line memory module (RDIMM) using the new 8Gb DDR4 chip. The new module’s data transfer rate per pin reaches up to 2,400 Mbps, which delivers approximately 29 percent performance increase, compared to the 1,866 Mbps bandwidth of a DDR3 server module.
The new 8Gb chips will allow production of server modules with a maximum capacity of 128GB by applying 3D through silicon via (TSV) technology, which will encourage further expansion of the high-density DRAM market.
The new DDR4 boasts improved error correction features, which will increase memory reliability in the design of enterprise servers. In addition, the new DDR4 chip and module use 1.2 volt, which is currently the lowest possible voltage.