Intel and Micron Technology announced 3D XPoint memory process technology for devices, applications or services.
3D XPoint technology is up to 1,000 times faster and has up to 1,000 times greater endurance than NAND, and is 10 times denser than conventional memory.
Intel said 3D XPoint technology is in production for select customers. Intel in a statement claims that it is a major breakthrough in technology and the first new memory category since the introduction of NAND flash in 1989.
Features of 3D XPoint technology
# Perpendicular conductors connect 128 billion densely packed memory cells. Each memory cell stores a single bit of data resulting in high performance and high-density bits.
# The initial technology stores 128Gb per die across two memory layers. Future generations of this technology can increase the number of memory layers, in addition to traditional lithographic pitch scaling, further improving system capacities.
# Memory cells are accessed and written or read by varying the amount of voltage sent to each selector eliminating the need for transistors, increasing capacity while reducing cost.
# With a small cell size, fast switching selector, low-latency cross point array and fast write algorithm, the cell is able to switch states faster than any existing non-volatile memory technology today.
“For decades, the industry has searched for ways to reduce the lag time between the processor and data to allow much faster analysis,” said Rob Crooke, senior vice president and general manager of Intel’s Non-Volatile Memory Solutions Group.
Possible use cases
# Retailers may use 3D XPoint technology to more identify fraud detection patterns in financial transactions
# healthcare researchers could process and analyze larger data sets in real time, accelerating complex tasks such as genetic analysis and disease tracking
# 3D XPoint technology could enhance the PC experience, allowing consumers to enjoy faster interactive social media, collaboration as well as more immersive gaming experiences.
3D XPoint non-volatile memory significantly reduces latencies, allowing more data to be stored close to the processor and accessed at speeds previously impossible for non-volatile storage, said Intel.