SanDisk has announced its 256 Gigabit 3-bit-per-cell (X3)48-layer 3D NAND chip and also begins operations for 3D NAND pilot line in Japan in collaboration with Toshiba.
The new chip is developed using 48-layer BiCS technology and will deliver compelling storage solutions for customers.
The company said BiCS offers new levels of density, scalability and performance to flash based devices.
Additionally, BiCS NAND memory will provide enhanced write/erase endurance, write speed and energy efficiency relative to conventional 2D NAND.
SanDisk has designed the chip for wide applicability in consumer, client, mobile and enterprise products.
“This is the world’s first 256 Gb X3 chip, developed using our industry-leading 48-layer BiCS technology and demonstrating SanDisk’s continued leadership in X3 technology,” said Siva Sivaram, executive vice president, memory technology, SanDisk.
In May, SanDisk launched the new SanDisk Z400s SSD, a solid-state drive (SSD) to replace hard-disk drives (HDDs) in computing platforms and embedded applications.
In February, SanDisk announced NAND flash solutions for connected cars and automotive infotainment systems.
Toshiba has launched the new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory which is the world’s first 256-gigabit 48-layerBiCS device.
The new product deploys 3-bit-per-cell (triple-level cell, TLC) technology.
BiCS FLASH is based on 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND Flash memory.
The company said new device targets diverse applications, including consumer SSD, smartphones, tablets and memory cards and enterprise SSD for data centers.
According to Toshiba it is promoting migration to BiCS FLASH by rolling out a product portfolio that emphasizes large capacity applications, such as SSD.