Samsung Electronics has started production of three-dimensional (3D) V-NAND flash memory using 32 vertically stacked cell layers.
The second generation V-NAND offering requires a higher level of design technology to stack the cell arrays than the previous 24-layer V-NAND. It delivers better production efficiency because Samsung can use essentially the same equipment it used for production of the first generation V-NAND.
In addition, Samsung has launched a line-up of premium SSDs based on its 2nd generation V-NAND flash memory with 128 gigabyte (GB), 256GB, 512GB and 1TB storage options. After introducing 3D V-NAND-based SSDs to data centers last year, Samsung is now extending its V-NAND SSD line-up to high-end PC applications, in expanding its market base.
The new 3D V-NAND-based SSDs have approximately twice the endurance for writing data and consume 20 percent less power, compared to planar (2D) MLC NAND-based drives.
Later this year, Samsung will introduce additional premium 3D-based SSDs based on this 2nd generation V-NAND memory with even higher reliability and higher-density in satisfying a diversity of customer needs.
Gartner said the memory market is expected to grow from US $75.5 billion in revenues to approximately $79.7 billion in 2017, while its NAND flash portion will continue to rapidly increase to reach a more than 50 percent share or about $44.6 billion in 2017.
InfotechLead News Team