Korean devices vendor Samsung Electronics today said it is accelerating its production of DDR4 memory modules to address strong demand along with the approaching introduction of the new Intel Xeon processor E5-2600 v3 product family.
Samsung is aiming for a bigger market for DRAM in the second half of 2014. In 2013, Samsung Electronics maintained the No. 2 position in semiconductor revenue market for the 12th year. The company has almost doubled its share of the market since 2002. Samsung’s memory business saw strong revenue growth for both DRAM and NAND flash.
On 4 April, Gartner said worldwide semiconductor revenue rose 5 percent to $315 billion in 2013. The combined revenue of the top 25 semiconductor vendors increased 6.9 percent in 2013.
Andrew Norwood, research vice president at Gartner, said: “Memory, and in particular DRAM, led this growth; not due to strong demand, but rather weak supply growth that pushed pricing higher. In fact, the overall market faced a number of demand headwinds during the year, with PC production declining 9.9 percent and the premium smartphone market showing signs of saturation as growth tilted toward lower-priced, albeit quite capable, entry-level and midrange smartphone models.”
Samsung’s DDR4 memory provides significant benefits to server manufacturers including lower power consumption, reliability and improved system performance with current speeds up to 2400 megabits per second (Mbps).
Samsung is ramping production of its entire family of 4Gb-based DDR4 modules in preparation for future systems based on the Intel’s Xeon processor E5-2600 v3 product family. They include DDR4 RDIMMs, LRDIMMs, and ECC SODIMMs, as well as x4, x8 and x16 DDR4 chips. Later this year, Samsung will also facilitate a transition to 8Gb 32GB DDR4 modules for the high density server market.
Jim Elliott, corporate vice president, Memory Marketing, Samsung Semiconductor, said: “We will continue to introduce high-density DDR4 modules for global OEMs that will facilitate the launch of next-generation enterprise servers and will maximize IT investment efficiency.”
The integration of Samsung DDR4 memory as part of future Intel Xeon processor E5-2600 v3-based systems will drive higher performance and lower power consumption in the enterprise and data center markets.
“Samsung’s new 20nm process technology will play a major role in driving DDR4 adoption in conjunction with the launch of the future Intel Xeon processor E5-2600 v3 product family,” said Geof Findley, director, PMO Memory Enabling & Applications Engineering, Intel.
Samsung DDR4 LRDIMMs, RDIMMs, and ECC SODIMMs are available globally in densities from 8GB to 64GB at speeds of 2133 to 2400 Mbps.